-25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in .

such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltage.

These P-Channel enhancement mode field effect transistor are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. T.

FDC6301N

FDC6302P

FDC6303N

FDC6305N

FDC6306P

FDC6308P

FDC6310P

FDC6312P

FDC6318P

FDC6320C

FDC6321C

FDC6322C

FDC6323L

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